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| BUZ351 Semiconductor Data Sheet October 1998 File Number 2266.1 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET Features * 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.400 (BUZ35 field effect transistor designed for applications such as * SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, /Sub* Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject * Linear Transfer Characteristics 11.5A, This type can be operated directly from integrated circuits. * High Input Impedance 00V, Formerly developmental type TA17434. * Majority Carrier Device .400 Ordering Information * Related Literature hm, - TB334 "Guidelines for Soldering Surface Mount PACKAGE BRAND -Chan- PART NUMBER Components to PC Boards" BUZ351 TO-218AC BUZ351 el ower NOTE: When ordering, use the entire part number. Symbol OSD ET) /Author G ) /KeyS ords Harris emionduc- Packaging JEDEC TO-218AC or, NhanSOURCE el DRAIN GATE DRAIN (FLANGE) ower OSET, O20AB) /Cretor () /DOCIN O pdfark /Pageode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 |
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